Irhnm9a7120
WebQUOTAZIONI, DISPONIBILITÀ & LEAD TIME. Power MOSFET surface Mount in package SupIR-SMD. Nessun cracking quando saldato direttamente su PCB in polyimide. Nell’utilizzo dei Power MOSFET nel classico package ermetico, uno dei principali problemi per i progettisti di sistemi spaziali è il loro montaggio sui circuiti stampati (PCB): la ... WebManufacturer Lead Time: 30 weeks. Minimum Of : 1. Maximum Of: 269. Country Of Origin: Philippines. Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75", Trail …
Irhnm9a7120
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WebThe IRHNMC9A7120 from Infineon Technologies is a MOSFET with Continous Drain Current 23 A, Drain Source Resistance 55 milliohm, Drain Source Breakdown Voltage 100 V, Gate … WebDrag and drop parameters to add, remove, and reorder. Circuit; Die Size; DLA Qualified; Forward Voltage Max; ID @ 100C (A) ID @ 100C N-Channel (A) ID @ 100C P-Channel (A) ID @ 25C
Webtemplate irhnm9a7120 d g s #***** # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE ... WebIR veröffentlicht den IRHNM9A7120. Dieser ist der R9, 100V MOSFET in einem SMD 0,2 Gehäuse. Dies ist das neueste Produktrelease des R9 RadHard MOSFETs. Das Bauteil ist auf 23A mit einer RDSon von nur 55mOhms spezifiziert und in 100k sowie 300kRad Versionen verfügbar. Die Teilenummer für die Keramikdeckel Version lautet: IRHNMC9A7120.
WebRad-Hard N-Channel MOSFETs rated from 20V to 600V, 100krad to 1,000krad in a wide range of packages. WebIRHYS67134CM 150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package also available with Total Dose Rating of 300kRads. Increases system efficiency by 2.5%* Reduces MOSFET power loss by 30%* Decreases RDS(on) up to 40% SEE Immunity to LET of 90MeV TID Ratings of 100 and 300Krad
WebSi7148DP. The Si7148DP from Vishay is a MOSFET with Continous Drain Current 28 A, Drain Source Resistance 9.1 to 14.5 Milliohm, Drain Source Breakdown Voltage 75 V, Gate …
WebIRHNM9A7120 - MOSFET from Infineon Technologies. Get product specifications, Download the Datasheet, Request a Quote and get pricing for IRHNM9A7120 on SatNow trump job creation numbersWebIRHNM9A7120SCS Discretes 100V 23A 14A Package SMD.2 from International Rectifier HIREL an Infineon Company doEEEt, Space EEE Parts Database, quality level, prices and … philippine news scriptWebIRHNM9A7120 datasheet - 100V 100kRad Single N-Channel TID Hardened MOSFET in a SMD-0.2 Details, datasheet, quote on part number: IRHNM9A7120 Specifications … trump january 6 speech textWebIRHNM9A7120 Pre-Irradiation International Rectifier HiRel Products, Inc. Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 300 kRads (Si) 1 … trump jan 6 peacefully and patrioticallyWebIR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challenge for over 25 years. With the introduction of the first RAD-Hard MOSFET in 1985 to its latest generation of devices, IR has continually exceeded engineers expectations. Explore Our Ground-breaking Technologies Dual Rad-Hard MOSFETs trump jr alec baldwin shirtWebIRHF9130 -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package. proven reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line. Base Part Status : Active ; IOUT Dual (A) : +/-1.67 ; Input Voltage Max (V) : 50 ; Input Voltage Min (V) : 18 ; Output Voltage Dual trump jr ceo of twitterWebThe IRHNMC9A7120 from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 23 A, Drain Source Resistance 55 milliohm, Drain Source … philippine news showbiz